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PD - 97056
IRF4000
HEXFET(R) Power MOSFET
Applications
l
IEEE 802.3af Compliant PoE Switch in Power Sourcing Equipment
VDSS
100V
RDS(on) max
ID
Features
l l l l l l
270m:@VGS = 12V 2.4A 350m:@VGS = 10V
' ' ' '
Exceeds IEEE 802.3af PoE requirements Rugged planar technology with large SOA Very Low Leakage at 100V (1.5A max) Fully characterized avalanche voltage and current Thermally enhanced Saves space: replaces 4 discrete MOSFETs
* 6 * 6 * 6 * 6
5mm x 10mm Power MLP
IRF4000 ISOMETRIC
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C dv/dt TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
100 30 2.4 1.9 19 3.5 0.028 8.6 -55 to + 150
Units
V A
c
Maximum Power Dissipation Linear Derating Factor Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range
W W/C V/ns C
Thermal Resistance
Parameter
RJL RJA Junction-to-Drain Lead Junction-to-Ambient (PCB Mount)
Typ.
Max.
1.5 36
Units
C/W
f
--- ---
Notes through are on page 7
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1
10/07/05
IRF4000
Static @ TJ = 25C (unless otherwise specified)
Parameter
V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
100 --- --- --- 3.5 --- --- --- --- --- 0.19 230 270 --- --- --- --- --- --- --- 270 350 5.7 1.5 10 100 -100
Conditions
V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA m V A nA VGS = 12V, ID = 2.4A VGS = 10V, ID = 2.4A
VDS = VGS, ID = 250A VDS = 100V, VGS = 0V
e e
e
VDS = 80V, VGS = 0V, TJ = 125C VGS = 30V VGS = -30V
Dynamic @ TJ = 25C (unless otherwise specified)
Parameter
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Parameter Single Pulse Avalanche Energyd Avalanche CurrentA
Min. Typ. Max. Units
1.6 --- --- --- --- --- --- --- --- --- --- --- --- --- --- 9.4 2.8 4.5 8.7 1.5 13 6.1 330 77 18 410 45 89 --- 14 4.2 6.8 --- --- --- --- --- --- --- --- --- --- Typ. --- --- pF ns S nC ID = 1.4A VDS = 80V VGS = 10V VDD = 50V ID = 1.4A RG = 6.2 VGS = 10V VGS = 0V
Conditions
VDS = 25V, ID = 1.4A
g e
VDS = 25V = 1.0MHz VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 80V, = 1.0MHz VGS = 0V, VDS = 0V to 80V Max. 8.7 1.4 Units mJ A
Avalanche Characteristics
EAS IAR
Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- 67 180 3.2 A 19 1.3 100 270 V ns nC
Conditions
MOSFET symbol showing the integral reverse
G S D
p-n junction diode. TJ = 25C, IS = 1.4A, VGS = 0V
TJ = 25C, IF = 1.4A, VDD = 25V di/dt = 100A/s
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRF4000
100
TOP VGS 15V 12V 10V 8.0V 7.5V 7.0V 6.5V 6.0V
100
TOP VGS 15V 12V 10V 8.0V 7.5V 7.0V 6.5V 6.0V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
10
10
BOTTOM
1
BOTTOM
0.1
1 6.0V 0.1
0.01
6.0V
60s PULSE WIDTH
Tj = 25C 0.001 0.1 1 10 100 1000 V DS, Drain-to-Source Voltage (V) 0.1 1
60s PULSE WIDTH
Tj = 150C 10 100 1000
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 2.4A 2.0
ID, Drain-to-Source Current ()
VGS = 10V
10 T J = 150C
1.5
1
T J = 25C VDS = 25V 60s PULSE WIDTH
1.0
0.1 4 6 8 10 12 14 16
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (C)
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
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3
IRF4000
10000
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C oss = C ds + C gd
12.0 ID= 1.4A
VGS, Gate-to-Source Voltage (V)
C rss = C gd
10.0 8.0 6.0 4.0 2.0 0.0
VDS= 80V VDS= 50V VDS= 20V
C, Capacitance(pF)
1000 Ciss 100
Coss
Crss 10 1 10 VDS, Drain-to-Source Voltage (V) 100
0
2
4
6
8
10
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
100
100 OPERATION IN THIS AREA LIMITED BY R DS(on) 10
10 T J = 150C
1
T J = 25C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1 T A = 25C 0.1
100sec 1msec 10msec 100msec 10 100 1000 Tj = 150C Single Pulse
VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-to-Drain Voltage (V)
0
1
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF4000
2.5
V DS
2.0
ID, Drain Current (A)
RD
V GS RG
D.U.T.
+
1.5
-V DD
10V
1.0
Pulse Width 1 s Duty Factor 0.1 %
0.5
Fig 10a. Switching Time Test Circuit
VDS 90%
0.0 25 50 75 100 125 150 T A , Ambient Temperature (C)
Fig 9. Maximum Drain Current vs. Ambient Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
100
Thermal Response ( Z thJA )
D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE )
J J 1 1 R1 R1 2 R2 R2 R3 R3 3 R4 R4 4 R5 R5 A 2 3 4 5 5 A
Ci= i/Ri Ci= i/Ri
Ri (C/W) i (sec) 1.131389 0.000036 1.543054 0.000865 9.712817 0.071341 12.93983 2.715 10.6812 67
0.1
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc 0.01 0.1 1 10 100
0.01 1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF4000
RDS(on), Drain-to -Source On Resistance ( m)
T J = 25C
RDS(on) , Drain-to -Source On Resistance (m)
1200
800 T J = 25C ID = 1.44A 600 ID = 2.4A 400
1000
800 Vgs = 10V 600
400 Vgs = 12V 200 0 5 10 ID, Drain Current (A) 15 20
200
0 4 6 8 10 12 14 16
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Drain Current
Current Regulator Same Type as D.U.T.
Fig 13. On-Resistance vs. Gate Voltage
50K 12V .2F .3F
VGS
QGS
D.U.T. + V - DS
QG QGD
EAS , Single Pulse Avalanche Energy (mJ)
VG
35
Charge
VGS
3mA
30 25 20 15 10 5 0
IG
ID
Current Sampling Resistors
ID TOP 0.86A 1.1A BOTTOM 1.4A
Fig 14a&b. Basic Gate Charge Test Circuit and Waveform
15V
V(BR)DSS tp
VDS L
DRIVER
RG
20V
D.U.T
IAS
+ V - DD
A
25
50
75
100
125
150
I AS
tp
0.01
Starting T J , Junction Temperature (C)
Fig 15a&b. Unclamped Inductive Test circuit and Waveforms
Fig 15c. Maximum Avalanche Energy vs. Drain Current
6
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IRF4000
IRF4000 Power MLP Package Outline Drawing
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. Starting TJ = 25C, L = 8.4mH, RG = 25, IAS = 1.4A.
Pulse width 400s; duty cycle 2%. When mounted on 1 inch square copper board. Guarantee by Design.
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IRs Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.10/05
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